Semiconductor detector PV-4TE-5

IRcompactrugged

PV-4TE 2-12 μm IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED The PV-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on four-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available. Features: - High performance in the 2.4 - 5.3 µm spectral range - Four-stage thermoelectrically cooled - No bias required - No 1/f noise Parameter: PV-4TE-5 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Four-stage Wavelength/λopt/µm: 5 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/ D∗/ m⋅Hz1/2⋅W−1: ≥1,5x1010 Time constant/ τ /ns: ≤80