Optical detector PV-4TE-8

semiconductordynamicIR

3.3 – 9.0 µm, four-stage thermoelectrically cooled PV-4TE-8 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 8.0 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 3.3 - 9.0 µm spectral range - Four-stage thermoelectrically cooled - No bias required - No 1/f noise Parameter: PV-4TE-8 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: Four-stage Wavelength/λopt/µm: 8 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/ D∗/ m⋅Hz1/2⋅W−1: ≥4,0x108 Time constant/ τ /ns: ≤45