Refractive index detector PVI-4TE-3,4

semiconductordynamichemispherical

2.2 – 3.6 µm, four-stage thermoelectrically cooled, optically immersed PVI-4TE-3.4 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects. Features: - High performance in the 2.2 - 3.6 µm spectral range - Four-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - No bias required - No 1/f noise Parameter: PVI-4TE-3,4 Material: MCT Type: Photovoltaic Immersion: Immersion Cooling: Four-stage Wavelength/ λopt/ µm: 3,4 Package: TO8, TO66 Window: wedged Al2O3 Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥7.0x1011 Time constant/ τ/ ns: ≤200