Semiconductor detector PVM-10,6

dynamicIR

2.0 – 13.0 µm, ambient temperature, multiple junction PVM-10.6 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 13.0 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. Features: - Spectral range from 2.0 to 13.0 µm - Large active area from 1×1 mm^2 to 4×4 mm^2 - Ambient temperature operation - No bias required - No 1/f noise - Operation from DC to high frequency - Sensitive to IR radiation polarisation Parameter: PVM-10,6 Material: MCT Type: Multiple junction Immersion: Non-immersion Cooling: No Wavelength/ λopt/ µm: 10,6 Package: BNC, TO8, TO39 Window: No Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥1,0x107 Time constant/ τ/ ns: ≤1,5