Semiconductor detector PVM-2TE-10,6

dynamicIRcompact

2.0 – 13.0 µm, two-stage thermoelectrically cooled, multiple junction PVM-2TE-10.6 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The detector is optimized for the maximum performance at λopt = 16.6 μm. It especially useful as large active area detector operating within 2.0 to 13.0 µm spectral range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Applications: - Spectral range from 2.0 to 13.0 µm - Large active area from 1×1 mm^2 to 3×3 mm^2 - Two-stage thermoelectrically cooled - No bias required - No 1/f noise - Sensitive to IR radiation polarisation Parameter: PVM-2TE-10,6 Material: MCT Type: Multiple junction Immersion: Non-immersion Cooling: Two-stage Wavelength/ λopt/ µm: 10,6 Package: TO8, TO66 Window: wedged ZnSe AR coated Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥1,0x108 Time constant/ τ/ ns: ≤3