Semiconductor detector PVMI-10,6

dynamicinfraredphotometric

2.0 – 12.0 µm, ambient temperature, multiple junction, optically immersed PVMI-10.6 is an uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 10.6 μm. It especially useful as large active area detector operating within 2.0 to 12.0 µm spectral range. Applications: - Spectral range from 2.0 to 12.0 µm - Ambient temperature operation - Hyperhemiimmersion microlens technology applied - No bias required - No 1/f noise - Sensitive to IR radiation polarisation Parameter: PVMI-10,6 Material: MCT Type: Multiple junction Immersion: Immersion Cooling: No Wavelength/ λopt/ µm: 10,6 Package: BNC, TO39 Window: No Detectivity/ D∗/ cm⋅Hz1/2⋅W−1: ≥1,0x108 Time constant/ τ/ ns: ≤1,5