2.4 – 4.5 µm, ambient temperature, optically immersed
PVI-4-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.
Features:
- 2.4 - 4.5 µm spectral range
- Ambient temperature operation
- Hyperhemiimmersion microlens technology applied
- No bias required
- No 1/f noise
- Convenient to use
- Very small size
- Cost-effective solution
- Quantity discounted price
- Fast delivery