2.4 – 4.3 µm, ambient temperature, optically immersed
PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.
Features:
- High performance in 2.4 - 4.3 µm spectral range
- Two-stage thermoelctrically cooled
- Hyperhemiimmersion microlens technology applied
- No bias required
- No 1/f noise
- D* better by one order of magnitude compared with the same type uncooled detector
- Wide dynamic range
- Quantity discounted price
- Fast delivery