Optical detector PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36

infrared

2.0 – 12.0 µm, four-stage thermoelectrically cooled, optically immersed, multiple junction PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36 is four-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in wide spectral range from 2.0 to 12.0 µm - Four-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - No bias required - No 1/f noise - Operation from DC to high frequency - Sensitive to IR radiation polarisation - Versatility - Quantity discounted price - Fast delivery