Refractive index detector PCI-3TE-9

opticalsemiconductordynamic

1.0 – 10.0 µm, three-stage thermoelectrically cooled, optically immersed PCI-3TE-9 is three-stage thermoelectrically cooled IR photoconductive detector based on sophisticated HgCdTe heterostructure for the best performance and stability, optically immersed in order to improve parameters of the device. The detector is optimized for the maximum performance at λopt = 9.0 μm. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). The device should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects. Features: - High performance in the 1.0 - 10.0 µm spectral range - Three-stage thermoelectrically cooled - Hyperhemiimmersion microlens technology applied - Long lifetime and MTBF - Stability and reliability - 1/f noise Parameter: PCI-3TE-9 Material: MCT Type: Photoconductive Immersion: Immersion Cooling: Three-stage Wavelength/ λopt/ µm: 9 Package: TO8, TO66 Window: wedged ZnSe AR coated Detectivity/D∗/ cm⋅Hz1/2⋅W−1: ≥6,2x109 Time constant/ τ/ ns: ≤60