Semiconductor detector PV-3,4

photoelectromagneticdynamicinfrared

2.4 – 3.6 µm, ambient temperature PV-3.4 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 3.4 μm. Cut‑on wavelength can be optimized upon request. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Features: - High performance in the 2.4 - 3.6 µm spectral range - Ambient temperature operation - No bias required - No 1/f noise Parameter: PV-3,4 Material: MCT Type: Photovoltaic Immersion: Non-immersion Cooling: No Wavelength/ λopt/ µm: 3,4 Package: BNC, TO8, TO39 Window: No Detectivity/ D∗/ cm⋅Hz1/2⋅W−: ≥5,0x109 Time constant/ τ/ ns: ≤260