Avalanche photodiode (APD) module

Similar to photomultipliers,avalanche photodiodes (APDs) are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm. PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range. Wavelength Opto-Electronic is the authorised distributor of LASER COMPONENTS brand of products in Singapore. Silicon APDs Si-APDs are suitable for the spectral range from 225nm to 1100nm. Silicon APDs for Photon Counting The SAP-series silicon avalanche photodiodes are primarily used in photon counting. This series features the highest efficiency and lowest dark current rates. Silicon APDs UV Sensitive The detector was developed specifically for (bio)medical applications in which the smallest signals in the short-wave UV/blue spectral range have to be detected. InGaAs APDs Our InGaAs avalanche photodiodes (APDs) are designed for a spectral range from 1100 nm to 1700 nm. The IAG series products feature a particularly good signal-to-noise ratio and support amplification of more than 30.