Electronics test system PMST

for semiconductorsMOSFETfor IGBT

PMST Power Device Analyzer Static Test System For MOSFET BJT IGBT And SiC GaN Semiconductors The power device static parameter test system (PMST) integrates a variety of measurement and analysis functions,which can accurately measure the static parameters of power devices (MOSFET, BJT, IGBT, etc.),the voltage can be as high as 3.5kV,and the current can be as high as 6000A.The system can measure the static parameters of power devices of different package types,and has the characteristics of high voltage and high current characteristics,uΩ-level accurate measurement,and pA-level current measurement capability.Supports measurement of junction capacitance of power devices in high-voltage mode, such as input capacitance, output capacitance, reverse transfer capacitance, etc. •Maximum voltage: 3500V,can be expanded to 10kV. •Large current up to 6000A(multiple modules in parallel). •nA leakage current, mu Ω conducting resistance. •Precision measurement accuracy 0.1%. •Modular configuration for adding or upgrading measuring units. •Test is of high efficiency, automatic switching and one-key test. •Graphical PC operation interface, the user can carry out the test after simple configuration. •Wide temperature range, support normal temperature and high temperature test,temperature control module is optional. •and it can also be controlled in conjunction with a third-party thermostat. •Test data can be exported. Support automatic export of test result data, support EXCEL format. •Compatible with various packages, tailormade fixture according to test requirements.