Capacitance factor test system

for semiconductorsMOSFETmodular

Semiconductor power device C-V characteristic testing system Capacitance-voltage (C-V) measurements are widely used to measure semiconductor parameters, especially MOS CAP and MOSFET structures. The capacitance of the MOS (metal-oxide-semiconductor) structure is a function of the applied voltage. The curve of the MOS capacitance changing with the applied voltage is called the C-V curve (referred to as the C-V characteristic). The C-V curve test can easily determine the silicon dioxide layer thickness dox , substrate doping concentration N, movable charge surface density Q1 in the oxide layer, and fixed charge surface density Qfc and other parameters. •Wide frequency range: the frequency range is 10Hz~1MHz, and the continuous frequency points are adjustable; •High precision and wide range: providing a bias range of 0V to 3500V, with an accuracy of 0.1%; •Built-in CV testing: Built-in automated CV testing software, including multiple testing functions •such as C-V (Capacitance-voltage), C-T(Capacitance-time), C-F (Capacitance-frequency), etc; •Compatible with IV testing: supports both breakdown and leakage current characteristics testing; •Real time curve drawing: The software interface directly shows test data and curves for easy viewing; •Strong scalability: The system adopts modular design and can be flexibly matched according to needs;