Relative pressure sensor DKS-CP300-M4
siliconanalog8VDC

relative pressure sensor
relative pressure sensor
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Characteristics

Pressure type
relative
Technology
silicon
Output
analog
Supply voltage
8VDC
Mounting
threaded
Process connection
G 1/2, NPT 1/2, M20 x 1,5
Material
stainless steel
Applications
for the petrochemical industry, for the oil and gas industry, for the chemical industry
Other characteristics
MEMS
Pressure range

Min.: 100,000 Pa
(14.5 psi)

Max.: 400,000 Pa
(58.02 psi)

400,000 Pa
(58.02 psi)

Long-term stability

Min.: 0 %

Max.: 0.05 %

Process temperature

Min.: -40 °C
(-40 °F)

Max.: 85 °C
(185 °F)

Description

Pressure Sensor adopts monocrystalline silicon sensor chip made of German advanced MEMS technology, and the world's original monocrystalline silicon double-beam suspension design, which achieves the international leading over-pressure performance and ensures the excellent stability of the signal. Embedded with the intelligent original imported pressure measuring diaphragm and signal processing module, it realises the perfect combination of static pressure and temperature compensation, which can provide high measurement accuracy and stability under a wide range of static pressure and temperature. BW-DKS-CP300 Pressure Sensor is a pressure sensor that acts directly on the diaphragm of the sensor, causing the diaphragm to produce a micro-displacement proportional to the pressure, detecting this change with an integrated electronic circuit and converting the output to a standard measurement signal corresponding to the pressure.

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